New trends in power electronics 0800-AR2POWELE
Lecture:
1. Introduction:
- mandatory knowledge and passing terms;
- short history of power semiconductor devices;
- types of power transistor devices;
2. Wide band-gap materials;
3. Modern power devices based on SiC and GaN;
4. Gate driver circuits for power switches;
5. Novel applications of WBG based power devices;
6. Power losses in power transistors;
7. Future applications of modern power semiconductor switches.
Laboratory:
Modeling of power converter systems using Plexim PLECS software.
Total student workload
Learning outcomes - knowledge
Learning outcomes - skills
Learning outcomes - social competencies
Teaching methods
Observation/demonstration teaching methods
Expository teaching methods
Type of course
Prerequisites
Course coordinators
Assessment criteria
Assessment methods:
Knowledge test - W1, W2, W3, W4, U1, K1
Assessment criteria:
Lecture: exam
D - 0 - 60% of the maximum number of points,
C- 61 - 70% of the maximum number of points,
C+ - 71 - 80% of the maximum number of points,
B- 80 - 85% of the maximum number of points,
B+ - 86 - 90% of the maximum number of points,
A - 91 - 100% of the maximum number of points
Laboratory: project
Design task carried out in the Plexim PLECS simulation environment regarding issues related to power electronic converter systems.
Bibliography
Basic literature:
1. A. M. Trzynadlowski, „Introduction to modern power electronics”, Third edition, Wiley.
2. M. Nowak, R. Barlik, „Poradnik inżyniera energoelektronika”, Tom 1, wydanie 2 Wydawnictwo naukowe PWN, Warszawa 2016
3. M. Nowak, R. Barlik, J. Rąbkowski, „Poradnik inżyniera energoelektronika”, Tom 2, wydanie 2 Wydawnictwo naukowe PWN, Warszawa 2015
4. A. Lidow, et. All, „GaN Transistors for Efficient Power Conversion, 3rd Edition”, Third edition, Wiley, 2019
Additional information
Additional information (registration calendar, class conductors, localization and schedules of classes), might be available in the USOSweb system: